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Growth of Antimony on Copper. A Scanning Tunneling Microscopy Study

©2017 Textbook 151 Pages

Summary

This study investigates the Copper(111) – Antimony (Sb) system which is characterized by a complex interplay between adsorbate interactions and adsorbate substrate interactions which manifest through self-assembly processes. Surface sensitive techniques such as Low Energy Electron Diffraction and Auger Electron Spectroscopy were utilized to determine the substrate cleanliness prior to the growth of monolayer Sb coverage. The surface chemical reactivity on an atom-by-atom basis of the Cu sample surface was studied by current imaging tunneling spectroscopy.
The use of surface sensitive techniques in studying the surface alloy in question allows for more precise statements to be made about the surface structure of the system at various temperatures. Based on the experimental results, a comprehensive study of the adsorption and segregation behavior of Sb on Cu(111), including the mechanisms for phase formation at the atomic scale, is presented in this study.

Excerpt

Table Of Contents


iv
finally rearrangement to more energetically stable configuration. The experimental results
illustrated the presence of a surface alloy after annealing at ~360°C. The Cu ­ Cu spacing
increased from 0.257 ± 0.01 nm (atomically clean Cu(111)) to 0.587 ± 0.02 nm after
annealing at 360°C. At that temperature, the STM images showed the surface protrusions of
different sizes and contrast, attributed to Cu and Sb atoms.
In addition to the conventional
)
3
×
3
(
R30°­Sb structural phase acquired at
~400°C, new metastable structural phases:
)
3
2
×
3
(2
R30°­Sb stable up to 250°C and
)
3
×
3
(2
R30°­Sb stable up to 350°C were obtained for the first time after annealing at
600°C and 700°C, respectively. The
)
3
×
3
(
R30°­Sb phase at 400°C showed an increase
in atomic spacing between Cu atoms (0.626 ± 0.001 nm) as compared to the surface alloy at
300°C (Cu-Cu spacing 0.460 ± 0.002 nm) and the asymmetry at the sample surface was
clearly evident. High resolution LEED studies revealed a rich phase showing extra spots on
the commensurate
)
3
×
3
(
R30°­Sb phase compared to the clean Cu(111) substrate. STM
data after annealing at 600°C and 700°C was best described by a structural model involving
an ordered p(2×2) and p(2×1) overlayer structures superimposed onto the
)
3
×
3
(
R30°­Sb
surface, respectively. At elevated temperatures LEED showed ring shaped diffraction
patterns composed of twelve equidistant spots which are consistent with the growth of a
hexagonal film forming three equivalent rotational domains. All the superstructures were
found to favour a structural model based on Sb atoms occupying substitutional rather than
overlayer sites within the top Cu(111) layer.
Other than the dissolution of Sb onto Cu(111), the study report also on the
segregation of Sb on Cu together with STS measurements. The surface chemical reactivity

v
on an atom­by­atom basis of the Cu sample surface was studied by current imaging
tunneling spectroscopy (CITS). The local density of states (LDOS) were derived from dI/dV
maps at low tunneling voltages by a simultaneous measurement of high resolution
topographic micrographs. The onset of the atomically clean Cu(111) surface was determined
to be ~8 meV below E
F
which reflects the onset of tunneling from the surface state band as
determined by scanning tunneling spectroscopy. The use of surface sensitive techniques
(LEED, AES, STM, STS) in studying the surface alloy in question has enabled more precise
statements to be made about the surface structure of the system at various temperatures.
Based on the experimental results, a comprehensive study of the adsorption and segregation
behavior of Sb on Cu(111), including the mechanisms for phase formation at the atomic
scale is presented in this study.
KEY WORDS
Self­assembly, Antimony, Copper, Organized growth, Scanning tunneling microscopy and
spectroscopy, Adsorbates, Monolayers, Diffusion, Superstructure, Surface alloys, Surface
tension, Root three by root three, Surface sensitive, Nanostructures, Annealing, Surfactant,
Silicone, Highly oriented pyrolytic graphite, Segregation, Activation energy, Tip
fabrication, Surface reconstruction, Structural phases, Density of states.

vi
TABLE OF CONTENTS
CHAPTER 1
INTRODUCTION ... 1
1.1
BACKGROUND ... 1
1.2
OBJECTIVES OF PRESENT WORK ... 8
1.3
THESIS OUTLINE ... 9
1.4
REFERENCES ... 11
CHAPTER 2
THEORY ... 19
2.1
THE FCC(111) SURFACE STRUCTURE ... 20
2.2
RELAXATION AND RECONSTRUCTION OF SURFACES ... 21
2.2.1
RELAXATION ... 22
2.2.2
RECONSTRUCTION OF CLEAN SURFACES ... 22
2.2.3
ADSORBATE­INDUCED RECONSTRUCTION ... 23
2.3
ADSORPTION ... 24
2.4
KINETICS OF ADSORPTION ... 25
2.5
THE 3 STRUCTURES ON (111) FCC METAL SURFACES ... 26
2.6
DYNAMICS OF ADATOMS DIFFUSION ... 27
2.7
INTERACTION AT THE SURFACE ... 29
2.7.1
INFLUENCE OF ADSORBATES ON SURFACES ... 29
2.8
TYPES OF GROWTH ... 31
2.8.1
FRANK­VAN DER MERWE (FM) OR LAYER­BY LAYER ... 32
2.8.2
VOLMER­WEBER (VW) OR 3D ISLAND ... 33
2.8.3
STRANSKI­KRASTANOW (SK) OR 3D ISLAND­ON WETTING­LAYER
GROWTH ... 33
2.9
INTRODUCTION TO SEGREGATION ... 33
2.10 THE MODIFIED DARKEN MODEL ... 34
2.11 REFERENCES ... 36

vii
CHAPTER 3
SCANNING TUNNELING MICROSCOPY (STM) ... 40
3.1
INTRODUCTION ... 40
3.2
ELECTRON TUNNELING ... 40
3.3
STM PRINCIPLE OF OPERATION ... 42
3.4
TUNNELING CURRENT ... 44
3.5
BARDEEN THEORY OF TUNNELING ... 46
3.6
MODES OF OPERATION ... 48
3.6.1
CONSTANT CURRENT IMAGING MODE ... 48
3.6.2
CONSTANT HEIGHT IMAGING MODE ... 50
3.7
SCANNING TUNNELING SPECTROSCOPY (STS) ... 51
3.7.1
CURRENT IMAGING TUNNELING SPECTROSCOPY (CITS) ... 52
3.7.2
CONSTANT CURRENT SPECTROSCOPY ... 53
3.7.3
CONSTANT VOLTAGE SPECTROSCOPY ... 53
3.8
STM MAJOR COMPONENTS ... 54
3.8.1
VIBRATION ISOLATION ... 54
3.8.2
ELECTRONIC FEEDBACK CONTROL SYSTEM ... 55
3.8.3
THE STM TIP ... 55
3.8.4
IMAGES AND FILTERING ... 56
3.9
ATOMIC RESOLUTION ON WELL KNOWN SUBSTRATES ... 57
3.10 HIGHLY ORIENTED PYROLYTIC GRAPHITE (HOPG) ... 58
3.10.1
EXPERIMENTAL ... 59
3.10.2
RESULTS AND DISCUSSION ... 60
3.11 SI(111) ­ 7×7 RECONSTRUCTION ... 64
3.11.1
EXPERIMENTAL ... 65
3.11.2
RESULTS AND DISCUSSION ... 66
3.12 REFERENCES ... 69
CHAPTER 4
EXPERIMENTAL FACILITIES AND PROCEDURES ... 73
4.1
TIP FABRICATION ... 73
4.2
CHARACTERIZATION TECHNIQUES ... 76
4.2.1
THE UHV VARIABLE TEMPERATURE STM SYSTEM ... 76

viii
4.2.2
LOW­ENERGY ELECTRON DIFFRACTION (LEED) ... 79
4.2.3
AUGER ELECTRON SPECTROSCOPY (AES) ... 81
4.3
REFERENCES ... 84
CHAPTER 5
DISSOLUTION OF SB ON CU(111) ... 85
5.1
INTRODUCTION ... 85
5.2
EXPERIMENTAL PROCEDURE ... 87
5.3
RESULTS AND DISCUSSION ... 89
5.3.1
ATOMICALLY CLEAN CU(111) ... 89
5.4
GROWTH OF SB ON CLEAN CU(111) SURFACES ... 91
5.5
STAGES OF DISSOLUTION ... 95
5.5.1
ANNEALING AT 360°C ... 95
5.5.2
ANNEALING AT 400°C ... 97
5.5.3
ANNEALING AT 600°C ... 103
5.5.4
ANNEALING AT 700°C ... 109
5.6
SEGREGATION OF SB ON CU(111) ... 112
5.7
SUMMARY ... 114
5.8
REFERENCES ... 116
CHAPTER 6
SCANNING TUNNELING SPECTROSCOPY (STS) ... 118
6.1
INTRODUCTION ... 118
6.2
STS OF CU(111) AT ROOM TEMPERATURE ... 120
6.3
SUMMARY ... 126
6.4
REFERENCES ... 127
CHAPTER 7
SUMMARY AND CONCLUSION ... 128
FUTURE PROSPECTS ... 134
PUBLICATIONS ... 135
INTERNATIONAL MEETINGS AND CONFERENCES ... 136
LOCAL MEETINGS AND CONFERENCES ... 136
AWARDS ... 138

ix
ACCRONYMS
Sb
Antimony
Ag
Silver
Cu
Copper
2­DEG
Two­dimensional electron gas
AES
Auger electron spectroscopy
HOPG
Highly oriented pyrolytic graphite
LEED
Low energy electron diffraction
LDOS
Local density of states
STM
Scanning tunneling microscopy
STS
Scanning tunnelling spectroscopy
UHV
Ultra­high vacuum
VT­STM
Variable temperature scanning tunneling microscopy
E
F
Fermi energy
FCC
Face centered cubic
HCP
Hexagonal closed packed
3D
Three dimensional
RT
Room temperature
BZ
Brillouin zone
FHUC
Faulted half unit cell
UHUC
Unfaulted half unit cell


1
CHAPTER 1
INTRODUCTION
1.1
Background
Materials and their properties have fascinated the human race since the past centuries
when fabrication was regarded more as an art than a science [1­3]. Today's way of life
depends heavily on the ability of a few million transistors to process data and a few million
more to store it, whether temporarily or permanently [4­10]. Until now, investigative
research is still carried out in the field of materials and surface science which is primarily
intended to expand the range of knowledge and properties of materials of various types for
both technological and fundamental applications [4­12]. Given that most material products
come in the form of alloys, some of the ongoing questions in the field of materials science
includes, whether different elemental materials are immiscible when combined under
controlled conditions, whether or not the materials dissolve in one another, and, if they do,
to what extent. Alternatively will they react to form a compound? If so, in what atomic
ratios (or stoichiometry)? And how does processing conditions influence the product of the
combined materials?
The field of modern surface science is driven by the ever increasingly specialized
intricate set of characterization tools that are drawn from a wide range of scientific
disciplines utilized to give answers to some, if not all of the above­mentioned questions

2
with a high degree of accuracy [11­17]. Due to the demand for faster processing speeds and
huge storage capacity of electronic devices, the study of materials has ushered in the field of
nanoscience and nanotechnology where materials are investigated in dimensions less than
100 nm [4,5,18­20]. In particular, the control of the shape and size in nanostructural growth
has been a very hot research field topic [19­21], since the properties and applications of
nanostructures mainly depend on their shape, size and surface morphology [9, 22­26].
It can be argued with considerable justification that the field of nanotechnology is
driven by the possibility of fabricating tailor­designed nanostructures with unique
properties. Two different approaches are generally used in the fabrication of nanostructures,
namely, top­down and bottom­up. The top­down method mainly includes photolithography
and etching techniques which permit the creation of nanostructures over large sample areas
[4,5,18]. Other examples of top­down include ball milling and arc discharge. The
photolithography process has some disadvantages, such as the sizes of nanostructures are
limited by wavelength of the photons used in the photolithography and mask sizes [4,5,20].
On the other hand, in bottom­up approach the building block materials for fabricating self­
assembled nanostructures are atoms, molecules or clusters [4­7,18,20]. Bottom­up
examples include chemical vapour deposition (CVD) [27,28], molecular beam epitaxy
(MBE) [29-31], sputtering, liquid to solid nucleation, pulsed laser deposition (PLD) [32­
34], sol­gel techniques [35­37], to mention but a few. The self­assembled nanostructures
can be formed in a growth environment taking advantages of some energetic, geometric and
kinetic effects of over­layer materials and substrates where molecules diffuse from atomic
to the mesosopic scale [18,20,38]. In this study, the latter approach is utilized to grow thin

3
film layers by controlling the flux of the deposited material, the kinetics and
thermodynamics of the underlying substrate.
Crystalline surfaces of noble metals (Cu, Ag, Au) have broken translational bulk
symmetry [39]. The lack of translational symmetry along the surface normal results in
electronic states localized perpendicular to the surface, the so­called surface states [40­42].
These surface states are localized to the first few atomic layers at the surface and form a
quasi two­dimensional free electron gas (2DEG) which is confined to the first few atomic
layers at the crystal surface [6,43,44]. Therefore, the electrons strongly influence the
interaction between the surface and its environment and thereby contribute to the chemistry
of surfaces, such as adsorption processes, equilibrium surface structures, or catalytic
reactions [10,54,46]. Furthermore, surface states are responsible for long­range substrate
mediated adsorbate interactions, which dominate the bulk­state mediated contribution for
large adsorbate­adsorbate separation [47,48]. In addition, the contribution from surface
states is relevant for the total energy balance of surface reconstructions [6,40].
Thin films are of special interest especially when they have a thickness of only a few
monolayers. Properties of such films may drastically differ from their bulk due to the
surface restriction to two dimensions and due to the interaction with the substrate [49­51].
The surfaces of bulk alloys are of practical interest for their chemical properties be it novel
activity or selectivity to certain reactions [52­54] in a way which differs from the
constituent elements in isolation or novel passiveness to corrosion. Some of the basic
thermodynamics of segregation in alloys is far from new. Nevertheless, our understanding
of these chemical and physical phenomena is far from complete, and the application of

4
surface science methods to investigate these phenomena is a manifestation of a general trend
to the study of surfaces of increasing complexity.
Copper (Cu) has proved to be a favoured substrate for studies of ultra­thin metallic
film growth for many reasons, including the relative ease of cleaning and maintaining
surface cleanliness, the high level of crystalline quality and the advantages of a full d­band
electronic configuration allowing high resolution studies of the surface and bulk electronic
structure [55]. Some surface adsorbate species such as antimony (Sb) and indium (In) are
known to act as surfactants in both homo ­ and hetero ­ epitaxy because of their low surface
energy [56,57]. These adsorbates appear to induce layer­by­layer growth [58] in systems
which otherwise tend to island growth, whilst remaining at the surface as the growth
proceeds rather than being incorporated into the growing film [59,60]. Despite increased
interest in the applications of surfactants on metal growth, the microscopic mechanisms of
dissolution and segregation of Sb is not yet fully understood [61]. Established examples of
this phenomenon is the role of Sb as a surfactant on the growth of Co on Cu(111) [62] and
the growth of Ag on Ag(111) [63,64].
The phenomenon of surface segregation is defined as the preferential enrichment of
one component of a multi­component system at a boundary or interface [65­68]. The extent
of segregation is influenced by strain energy due to the atomic size mismatch between the
solute and the solvent, as well as the differences in their surface energies [52,69,70]. During
surface segregation the surface enthalpy is different from the bulk enthalpy and occurs at
finite temperatures (or in the materials growth process) when energy activation barriers to
diffusion are overcome.

5
When monolayers of Sb are grown on Cu(111) or Ag(111) there are generally two
proposed atomic structural models [71,72]. On the first model, Sb atoms are located above the
(111) surface in face centered stacking sites as adatoms, while the second structure, involves Sb
atoms sitting substitutionally within the (111) surface layer of the substrate [71­74]. Previous
experimental [71­73] and theoretical [74,75] studies have suggested that the energetics of this
systems are such that in the ordered 0.33 ML Ag(111)
)
3
×
3
(
R30°­Sb or Cu(111)
)
3
×
3
(
R30°­Sb phase, the Sb atoms substitute one­third of the outermost substrate (Ag or Cu) atoms to
produce an ordered surface alloy which shows out­ward relaxation of the Sb atoms. Thus these
previously reported studies rules out the first proposition of Sb sitting as adatoms on the substrate.
The formation of the
)
3
×
3
(
R30° superstructure, is well understood in the case of Sb­
Ag system since Ag and Sb form bulk intermetallic compounds and their atomic radii mismatch is
small (~1%), however, it is rather difficult to understand how such a phase can form in the Sb­Cu
system because of the large atomic mismatch (~ 15%) between Cu and Sb [76,77]. Therefore, the
observation of almost identical two­dimensional surface alloys in both cases reveals that the main
driving forces for formation is the tendency to chemical ordering, almost independently of size­
mismatch between deposit and substrate atoms. The Cu ­ Sb system has been widely studied for
(100) and (111) Cu surface orientations [76,77], considering both segregation and dissolution of
deposited Sb layers. Previous in situ STM, Auger electron spectroscopy (AES), and low energy
electron diffraction (LEED) studies of the dissolution and segregation of ~ 1 ML of Sb on Cu(111)
has revealed that at ~ 400°C, the dissolution stops, due to formation of a surface alloy which
exhibits a p
)
3
×
3
(
R30° superstructure which is fully consistent with one Sb atom per unit cell
in the p
)
3
×
3
(
R30° structure [78]. The dissolution and segregation kinetics are thus closely
linked to the equilibrium surface segregation.

6
At higher Sb coverages, a p(2×2) reconstruction has been observed on Ag(111), and
explained as an ordered p(2×2)­Sb overlayer superimposed on the
)
3
×
3
(
R30°­Sb surface
[72,73]. A similar structure at higher Sb coverages has not been reported on the CuSb system.
Theoretical calculations have shown that the creation of
)
3
×
3
(
R30°­Sb surface alloy is
energetically favoured [75]. The mechanism underlying the dissolution and segregation of the
large Sb (atomic radius = 0.159 nm) atoms deposited on the (111) close­packed Cu (atomic radius
= 0.128 nm) surface is still an open topic for investigation.
From an experimental point of view, the first available methods capable of investigating
surfaces at the atomic level were diffraction methods in the late 20s [17,79] followed by scanning
tunneling microscopes in the late 70s [80­82]. Quantifying and understanding the structure of
surfaces, and particularly of adsorbates on surfaces, is a key step to understanding many aspects of
the behavior of surfaces including the electronic structure and the associated chemical properties.
Both low­energy electron diffraction (LEED) and reflection high­energy electron diffraction
(RHEED) has for example brought many successes in understanding atomic surface
reconstruction [83­85]. One of the major disadvantages of these methods is that the surface is
represented in the reciprocal space, making interpretation of measured physical data more
intricate.
The first real space experimental technique capable of imaging atoms at a surface is the
field ion microscope (FIM) [86­88]. While this method has been widely and successfully used to
study the diffusion of adatoms and clusters at a surface, it is not suited to investigate large areas of
nanostructure­covered singular surfaces.

7
The cornerstone of modern growth investigation was laid by the invention of the scanning
tunneling microscope (STM) in 1982 by Binnig and Rohrer (Nobel laureates in 1986) [80,81]
which will be the main experimental tool for this study. The invention of the STM solved one of
the most intriguing problems which fascinated surface scientist for quite some time, the Si(111)­
(7×7) reconstruction [81,89]. Other than providing images of surfaces and adsorbate atoms and
molecules with unprecedented resolution, the STM has also been used previously to modify
surfaces, for example by locally pinning molecules to a surface [90] and by transfer of an atom
from the STM tip to the surface [91]. Recent developments in nanoscience make it possible to
engineer artificial structures at surfaces [92­99]. The STM tip can be used as an engineering or
analytical tool, to fabricate artificial atomic­scale structures where novel quantum phenomena can
be probed and properties of single atoms and molecules can be studied at an atomic level
[82,100,101]. These structures include quantum corrals [100,101] and atomic chains [102].
The STM can also be operated in the spectroscopy mode (STS) to study the local
electronic structure of a sample's surface. This is usually done by sweeping the bias voltage V and
measuring the tunneling current I while maintaining constant tip­sample separation z which
results in current vs. voltage (I­V) curves characteristic of the electronic structure at a specific x,y
location on the sample surface [103-105]. By numerically differentiating I­V, the conductance
dI/dV can be obtained. The interpretation of dI/dV spectra can be complex but it can be shown
that, under ideal conditions, dI/dV is a good measure of the sample density of states (DOS) [103-
105]. This method makes it possible to get energy spectra of very small objects at the surface. This
can be used in the microelectronics industry, for example, to control electrical properties of
transistors, especially those of a very small size.

8
1.2
Objectives of present work
The main aim of this project is to utilize an Ultra­High Vacuum Variable Temperature
Scanning Tunneling Microscopy (UHV VT­STM) to study the dissolution and segregation
of fractional monolayer of antimony grown on copper (111) surfaces in­situ.
The main objectives are:
(1)
Optimize the VT­STM system in order to obtain morphology of Cu(111), HOPG
and Si(111) with atomic scale resolution in order to calibrate the STM especially
using the well-known Si surfaces
(2)
Systematic study the nature of surface reconstruction of conducting and
semiconducting material in UHV
(3)
Investigate the atomic interaction of the Cu­Sb system and its various structural
phases as a function of annealing temperature
(4)
Obtain local Auger spectral data at various temperatures on the segregation of Sb
to the Cu(111) surface in order to calculate diffusivity, segregation energy and
activation energy in such a system at the nano­scale and compare their bulk
values available in literature
(5)
Perform current­voltage measurements to obtain valuable information regarding
the electronic structure of the Cu­Sb system

9
1.3
Thesis outline
The thesis is structured as follows:
Chapter 2, introduces the theoretical background on surfaces and various processes
such as reconstructions at surfaces, the kinetics of thin film growth and types of growth. The
chapter also introduces the basic concepts of segregation and the modified Darken model
which describes segregation phenomenon for binary systems.
Chapter 3 focuses on the main experimental method of the thesis, the scanning
tunneling microscopy (STM). The chapter contains the necessary background information to
understand the experimental work presented later in the thesis. These include the theory of
electron tunneling and the operation principles of the STM system. The theoretical
background on scanning tunneling spectroscopy which forms part of the STM is also
explained in detail in this chapter. The chapter also explores the unprecedented resolution of
the STM by studying the surfaces of well-known substrates such as Si(111) and HOPG in
detail.
Chapter 4 comprises the experimental techniques and procedures. These include the
theory of surface sensitive techniques (AES, LEED). The UHV VT­STM system and its
components together with tip fabrication processes are also discussed.
Chapter 5 looks at the adsorption and dissolution studies of sub­monolayer Sb grown
on Cu(111) surface to get better insight into the atomic structure/s of the surface alloy and
the influence of temperature at the sample surface. In addition, the chapter reports on the
experimental segregation studies of Sb on the copper sample.

10
Chapter 6 looks at the added advantage of being able to acquire electronic
information simultaneously with topographical data utilizing STS which allow direct
comparisons of the topography and the electrical characteristics of the sample surface.
Chapter 7 focuses on discussions and conclusions. Key points regarding experimental
results from dissolution, segregation and the conductance measurements are summarized to
give a better insight with a complete conclusion of the study.

11
1.4
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19
CHAPTER 2
THEORY
The inception of modern surface science dates back to the early 1960s. The
breakthrough in the field resulted from a combination of factors, including progress in ultra
high vacuum technology, the development of experimental methods sensitive to the surface
atomic structure and the appearance of high­speed digital computers.
A surface is created by cleaving a solid and breaking of bonds between the atoms of
the cleavage planes [1­5]. The work done in forming a unit area of a new surface is called
the surface energy and is denoted by . The surface free energy of noble metals (Cu, Ag,
Au) is more than three times higher than that of van der Waals substrates like graphite. It is
this surface free energy which drives adsorption and catalysis and explains why metals are
very active materials in such processes [4].
It is conventional to use the z­axis for the surface normal, leaving x and y for
directions in the surface. The interest in surface properties of a material usually
encompasses the bulk properties of the material. Therefore, understanding of the surface
properties requires a good knowledge of bulk properties. Almost all surface science studies
are concerned with addition of controlled amount of foreign atoms (adsorbates) on
atomically clean surfaces. There are various ways in which adsorbates or molecules can be
introduced onto the host material surface (substrate) [6].

20
The adatoms can condense onto the surface from the vapour phase through a process
called adsorption or alternatively segregate from the sample bulk, or diffuse along the
surface. Knowledge of the structure of surfaces and particularly of adsorbates on surfaces is
a key step to understanding many aspects of the behavior of surfaces including the
electronic structure and the associated chemical properties.
2.1 The FCC(111) surface structure
Surface structures of metals, being the most studied of all surface structures illustrate
the degree of reproducibility and accuracy achievable by modern surface science techniques.
Many metal elements crystallize in the face­centered cubic (FCC) structure. Among them
are the noble metals copper (Cu), silver (Ag), and gold (Au) [7]. In the atomic
configuration, noble metals are characterized by a completely filled d­level subshell and
one single s­type valence electron. In the solid state, these electrons are strongly delocalized
to form an sp­derived band. Close to the Fermi­level, the electronic properties are found to
be in very good agreement with that of a free­electron model [8]. Even though the surface
region is in principle a three­dimensional (3D) entity having a certain thickness, all
symmetry properties of the surface are 2D ­ meaning the surface structure is periodic only
in two directions. Atoms in the bulk of FCC (111) materials have coordination number 12
while those at the surface have 9 nearest neighbours. This means that the mean­square
amplitude of the surface atoms is much larger than in the bulk. The surface energies per
atom increase with decreasing coordination of the surface atoms. For low index surfaces of
FCC metals (figure 2.1) the stability decreases in the trend (111) (100) (110).

trivial
hexag
densit
surfac
2.2
surfac
the b
proce
energ
severa
which
The surfac
l mirror pl
gonal close
ty is the hig
ces.
Figure 2.1
adsorption
Relaxatio
The subseq
ce) atoms to
bulk crystal
esses are the
gy by increa
al ways, as
h prevent
FCC hollow
H
(a)
ce layer of
lanes. The
packed (H
ghest for th
1. The (a) (1
n sites for ada
on and re
quent proce
o form a str
are called
e energetics
asing the c
shown in f
or hinder
w
HCP
the {111}
surface latt
HCP) site an
he {111} sur
111), (b) (10
atoms on the
econstruct
esses which
ructure with
relaxation
s of the sys
coordination
figure 2.2).
these rearr
O
Bridge
21
surface has
tice has tw
nd the face
rfaces, follo
00), and (c)
(111) FCC s
tion of sur
h involves t
h a different
and recons
stem [4,5] (
n number o
As with al
rangements
On top
(b)
s a six­fold
wo different
e centred cu
owed by the
(110) phases
surface phase
rfaces
the rearrang
periodicity
struction. T
(i.e. the des
of surface a
ll processes
at low te
d rotation ax
t three fold
ubic (FCC)
e {100} and
s of a perfec
e [9].
gements of
y and/or sym
The driving
sire to reduc
atoms and t
, there are
emperatures
(c)
xis and thre
d hollow si
site. The p
d finally the
ct FCC cryst
f surface (an
mmetry than
force behi
ce the surfa
this is achi
kinetic limi
. Relaxatio
ee non­
tes, the
packing
e {110}
tals and the
nd near
n that of
ind this
ace free
eved in
itations,
ons and

22
reconstructions often occur for atomically clean surfaces in vacuum, in which the interaction
with any another medium is not at play.
2.2.1 Relaxation
Atoms at the surface of a crystal have fewer neighbours than atom in the bulk. The
reduction of nearest neighbour gives rise to redistribution in the selvedge. This changed
force field results in the decrease in the layer spacings d perpendicular to the surface (figure
2.2 (a)) with no change either in the periodicity parallel to the surface or to the symmetry of
the surface unit cell [5].
2.2.2 Reconstruction of clean surfaces
Reconstruction of surfaces is a much more readily observable effect, involving larger
(yet still atomic scale) displacements of the surface atoms. Unlike relaxation, the
phenomenon of reconstruction (figure 2.2 (b)) involves a change in the periodicity of the
surface structure. Surface reconstruction can affect one or more layers at the surface, and
can either conserve the total number of atoms in a layer (a conservative reconstruction) or
have a greater or lesser number than in the bulk (a non­conservative reconstruction). The
reconstructive surface phase transition can either occur spontaneously or be activated by
temperature or by addition of adsorbates [10].

2.2.3
chang
obser
the cl
surfac
type o
The t
adsor
substr
Figure 2.
(a) relaxe
reconstru
3 Adsorb
At the low
ges in atom
rved by diffr
lean state w
ces of trans
of reconstru
thermodynam
rbate­substr
rate atoms i
.2. Schemat
ed surface (d
uction.
ate­induc
west level o
mic layer sp
raction tech
while other s
ition metals
uction (figu
mic driving
rate bonds
n the clean
tic side view
d
12
d
bulk
),
ced recon
of surface m
pacings tha
hniques. Cer
urface recon
s Ag, Pt and
ure 2.2 (c))
g force for t
that are co
substrate su
23
w of characte
(b) Surface
struction
modificatio
at occur clo
rtain surface
nstruct in th
d Au transf
when oxyg
this kind of
omparable t
urface.
eristic rearr
reconstruct
n, adsorbat
ose to the
es (bare (110
he presence
forms to (2
×
gen is adsorb
f reconstruct
to or stron
angements o
tion (c) mis
tes often in
surface of
0) Cu, Pd an
of adsorbed
×
1) pattern o
rbed onto th
tion is the f
nger than th
of surface a
sing row typ
nfluence the
f a clean su
nd Ni) are s
d atoms. Th
of the missi
he surface [
formation of
he bonds b
atoms
pe of
e subtle
ubstrate
stable in
he (110)
ing row
11­13].
f strong
between

24
2.3 Adsorption
The process of adsorption occurs when a gas or liquid solute accumulates on the
surface of a solid forming a molecular or atomic film [14,15]. A qualitative distinction can
be made between chemisorption and physisorption in terms of their relative binding
strengths and mechanisms [11,16]. In the case of physisorption, the adsorbate­substrate
interaction is weak due to van der Waals forces and the binding energies are within the
ranges of 10 ­ 100 meV. The overlap of the wave functions of the molecule and the
substrate is rather small, thus, the perturbations of the structural environment near the
adsorption site is negligible [5,17]. When the adsorbate­substrate interactions forms strong
chemical bonds that are either covalent or ionic with binding energies of about 1 ­ 10 eV,
the process is often denoted chemisorption [11]. In the later process, the strong bonds alters
the adsorbate chemical state and alternatively changes the structure of the substrate either by
relaxation or reconstruction of the few top atomic layers of the substrate. This process is the
result of the long range order observed on most single crystal surfaces with adsorbates
which possess two­dimensional phase characterised by its own electronic, chemical, and
mechanical properties [17,18].
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